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Transport mechanisms in tris(8-hydroxyquinoline)aluminium (Alq3) electronic layers : a study by photodipolar absorption

Identifieur interne : 008096 ( Main/Repository ); précédent : 008095; suivant : 008097

Transport mechanisms in tris(8-hydroxyquinoline)aluminium (Alq3) electronic layers : a study by photodipolar absorption

Auteurs : RBID : Pascal:06-0283155

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English descriptors

Abstract

This paper describes the role of traps in the electronic conductivity of tris(8-hydroxyquinoline)aluminium (Alq3) in a conventional sandwich structure with indium tin oxide and aluminium electrodes. New results obtained by photodipolar absorption techniques and impedance spectroscopy are presented. The former method acts as a probe to highlight the role of traps. It is shown that optical pumping of electrons to trap levels gives a clear increase in dielectric absorption due to the reorientation of dipoles associated with trapped charges. The trap depth is estimated to be around Et = 0.19 eV, a value in good agreement with theoretical calculations and thermoluminescence measurements. The latter method permits a representation of the sample in terms of a circuit composed of a parallel capacitor (Cp) and resistor (Rp) both in series with a resistor Rs50Ω located on the anode side. A logarithmic plot of Rp as a function of the dc bias voltage gives a linear law that is recognized, for the first time, to be a consequence of a trapped charge limited (TCL) current. The linearity can be improved by the introduction of a field-dependent mobility.

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<div type="abstract" xml:lang="en">This paper describes the role of traps in the electronic conductivity of tris(8-hydroxyquinoline)aluminium (Alq3) in a conventional sandwich structure with indium tin oxide and aluminium electrodes. New results obtained by photodipolar absorption techniques and impedance spectroscopy are presented. The former method acts as a probe to highlight the role of traps. It is shown that optical pumping of electrons to trap levels gives a clear increase in dielectric absorption due to the reorientation of dipoles associated with trapped charges. The trap depth is estimated to be around E
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50Ω located on the anode side. A logarithmic plot of Rp as a function of the dc bias voltage gives a linear law that is recognized, for the first time, to be a consequence of a trapped charge limited (TCL) current. The linearity can be improved by the introduction of a field-dependent mobility.</div>
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